A research team has demonstrated that thin films of ruthenium dioxide (RuO₂) exhibit altermagnetism—the defining property of what is now recognized as the third fundamental class of magnetic materials.
Altermagnets have the potential to overcome limitations associated with current magnetic random access memory using conventional ferromagnets and are attracting attention as promising materials for next-generation high-speed, high-density memory devices.
In addition to identifying RuO₂ as a strong candidate for such applications, the study also highlights the possibility of enhancing its functionality through control of crystallographic orientation.
The research findings are published in Nature Communications.
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