The race for faster, more efficient chips has reached a new milestone. Scientists at Shanghai’s Fudan University have unveiled the world’s first full-featured 2D flash chip, an engineering feat that could revolutionize how future electronic devices store and process information.
The chip merges ultrafast 2D flash memory with mature silicon-based complementary metal oxide semiconductor (CMOS) technology.
The breakthrough device supports eight-bit instruction operations and 32-bit high-speed parallel operations with random access, achieving a 94.3 percent memory cell yield.
Its operation speed surpasses existing flash memory technologies, marking the first successful engineering integration of 2D materials with silicon.
In an age dominated by artificial intelligence, where data access speed is everything, this advancement addresses one of computing’s most pressing bottlenecks.
The limited speed and high power consumption of traditional memory architectures have long slowed the growth of AI systems. Fudan’s innovation may just unlock a faster future.
To read more, click here.