In a potential turning point for microelectronics, scientists in Tokyo have crafted a powerful new transistor that ditches silicon in favor of a crystalline material called gallium-doped indium oxide.
Engineered with a gate-all-around design—where the transistor’s control gate wraps completely around the current channel—this tiny device achieves remarkable electron mobility and long-term stability. The result? A breakthrough transistor that could dramatically boost performance in AI and big-data applications, and keep Moore’s Law alive in a post-silicon world.
To read more, click here.