“Silicon has driven remarkable advances in electronics for decades by enabling continuous miniaturization of field-effect transistors (FETs),” said Penn State Professor Saptarshi Das.
“FETs control current flow using an electric field, which is produced when a voltage is applied.”
“However, as silicon devices shrink, their performance begins to degrade.”
“Two-dimensional materials, by contrast, maintain their exceptional electronic properties at atomic thickness, offering a promising path forward.”
In their complementary metal-oxide semiconductor (CMOS) computer, Professor Das and colleagues used two different 2D materials to develop both types of transistors needed to control the electric current flow: molybdenum disulfide for n-type transistors and tungsten diselenide for p-type transistors.
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