A research team at NIMS has developed the world’s first n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). This breakthrough marks a significant step toward realizing CMOS (complementary metal-oxide-semiconductor) integrated circuits based on diamond, enabling their use in extreme environments and advancing the development of diamond-based power electronics.
Diamond as a semiconductor offers exceptional physical properties, including an ultra-wide bandgap of 5.5 eV, high carrier mobility, and excellent thermal conductivity. These characteristics make diamond a highly promising material for high-performance, high-reliability applications in extreme conditions, such as high temperatures and intense radiation—like those near nuclear reactor cores.
Diamond electronics not only reduce the need for complex thermal management systems compared to conventional semiconductors, but they also offer greater energy efficiency, higher breakdown voltage tolerance, and enhanced durability in harsh environments.
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