A team of researchers from China has developed a novel way to make monolayer transistors from two-dimensional (2D) semiconducting materials, such as black phosphorus and germanium arsenide. These materials are very thin, flexible, and have high carrier mobility, making them ideal for creating wearable and miniaturized electronic devices.
However, making monolayer transistors from 2D materials takes work, as they are very fragile and require strong electrical contact. Most existing monolayer transistors are based on a few 2D materials with stable lattice structures, such as graphene, tungsten diselenide, or molybdenum disulfide (MoS2).
The researchers, led by Wangying Li and Quanyang Tao from Hunan University, the Chinese Academy of Sciences, and Wuhan University, wanted to explore other 2D materials that have been mainly used for multi-layer transistors, such as black phosphorus (BP) and germanium arsenide (GeAs). Their work is published in the journal Nature Electronics.
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